Photoconductive device and method of operating the same

Details Photoconductive device and method of operating the same Photoconductive device and method of operating the same

1989-10-12

1990-08-28

Wieder, Kenneth

Electric lamp and discharge devices

Cathode ray tube

Image pickup tube

313387, H01J 3138

Patent

active

049528394

ABSTRACT:
A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

REFERENCES:
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patent: 4128844 (1978-12-01), Illenberger et al.
patent: 4488083 (1984-12-01), Inoue et al.
Physics of Semiconductor Devices, Sze, 12/69, pp. 56-65.
"Electron and Hole Ionization Rates in Epitaxial Silicon at High Electron Fields", Grant, Solid State Electronics, vol. 16, pp. 1189-1203, 12/73.
Physica Status Solidi (a), vol. 59, pp. 389-393, Juska et al., 12/80.
Appl. Phys. Lett. 36(4), Umebu et al, pp. 302-303, 2/80.
Physica Status Solidi (a), vol. 77, pp. 387-391, Juska et al., 12/83.

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