Photoconductive bolometer infrared detector

Details Photoconductive bolometer infrared detector Photoconductive bolometer infrared detector

2007-08-28

2007-08-28

Hannaher, Constantine (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

Reexamination Certificate

active

11079592

ABSTRACT:
A photoconductive bolometer infrared detector using a detector material that has a resistance changed due to photo-excitation and thermal-excitation from an incident radiation in the infrared range. The resistance changes caused by photo-excitation and the thermal excitation are additive for this detector material. The detector material is suspended over a substrate by a gap of one quarter wavelength of the incident radiation, such that the thermal absorption of the incident radiation can be enhanced. Preferably, the detector material is lead selenide that has a thermal coefficient of resistance as high as 3.45%° C.−1, which is about 60% higher than that of vanadium oxide that has been widely used as the detector material in the conventional microbolometers. This detector structure allows dual band uncooled or moderately cooled operation. In the case of the use of PbSe as the detector material, largely enhanced MWIR operation is enabled over a standard uncooled micro-bolometer tuned to the LWIR, and high temperature dual band MWIR and LWIR operation is enabled as compared to quantum well or HgCdTe detectors that must be cooled to cryogenic temperatures.

REFERENCES:
patent: 4478077 (1984-10-01), Bohrer et al.
patent: 5450053 (1995-09-01), Wood
patent: 6605806 (2003-08-01), Walmsley et al.
patent: 6734516 (2004-05-01), Jacksen et al.
patent: 6777681 (2004-08-01), Schimert et al.
patent: 2003/0168599 (2003-09-01), Liddiard

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