Photochemical film-forming method

Coating processes – Electrical product produced – Welding electrode

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427 541, 427 55, 118722, 118620, C23C 1600

Patent

active

048391964

ABSTRACT:
An apparatus for photochemically forming a film on a substrate using a photo-induced chemical vapor deposition method comprises an optical lens through which a light beam is radiated to a reactive atmosphere gas to deposit and grow a film uniform in thickness on a substrate.

REFERENCES:
patent: 4260649 (1981-04-01), Denison
patent: 4340617 (1982-07-01), Deutsch et al.
patent: 4581248 (1986-04-01), Roche
patent: 4694777 (1987-09-01), Roche
Chuang, J. Chem. Phys. 74(2), Jan. 15, 1981 pp. 1453-1460.
"Laser-Induced Chemical Vapor Deposition of SiO.sub.2 ", P. K. Boyer et al., Boyer et al., Appl. Phys. Lett. 40 (8), 15, Aprl. 1985, pp. 716-718.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Photochemical film-forming method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photochemical film-forming method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photochemical film-forming method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1276595

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.