Photocell utilizing a wide-bandgap semiconductor material

Details Photocell utilizing a wide-bandgap semiconductor material Photocell utilizing a wide-bandgap semiconductor material

1982-04-27

1984-06-05

Edlow, Martin H.

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

357 2, 357 59, 136258, H01L 4500, H01L 2714, H01L 3100, H01L 2904

Patent

active

044531737

ABSTRACT:
A photocell comprises a p-i-n amorphous silicon structure having a wide bandgap layer adjacent to either the p-type or n-type layer. This structure reduces the absorption of light entering the photocell and the back-diffusion of minority carriers.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4109271 (1978-08-01), Pankove
patent: 4163987 (1979-08-01), Kamath
patent: 4217148 (1980-08-01), Carlson
patent: 4253882 (1981-03-01), Dalal
patent: 4358782 (1982-11-01), Takasuka
patent: 4388848 (1983-06-01), Hamakawa et al.
"a-SiC:H/a-Si:H Heterojunction Solar Cell Having More than 7.1% Conversion Efficiency" by Y. Tawada et al., Appl. Phys. Lett. 39 (3) Aug., 81.

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