Photocell

Details Photocell Photocell

1991-08-20

1993-04-27

Wojciechowicz, Edward J.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 49, 257184, 257631, H01L 2714, H01L 3100

Patent

active

052065340

ABSTRACT:
In the case of a photocell based on gallium arsenide or indium phosphide, a layer of amorphous, hydrogenous carbon (a-C:H) having a thickness of .ltoreq.0.1 .mu.m and a specific electrical resistance of .gtoreq.10.sup.6 .OMEGA..cm is placed on a layer of p-doped gallium arsenide (GaAs) or indium phosphide (InP).

REFERENCES:
patent: 4695859 (1987-09-01), Guha et al.
patent: 5039358 (1991-08-01), Birkle et al.
patent: 5055421 (1991-10-01), Birkle et al.
patent: 5073785 (1991-12-01), Jansen et al.
patent: 5079178 (1992-01-01), Chouan et al.
patent: 5087959 (1992-02-01), Omori et al.
Winstel, Von Gunter "Siemens Energietechnik" No. 2, pp. 266-269 (1980).

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