Photocathode having internal amplification

Details Photocathode having internal amplification Photocathode having internal amplification

1986-12-17

1989-05-09

James, Andrew J.

357 16, 357 4, 357 58, H01L 2714

Patent

active

048293555

ABSTRACT:
A photocathode having internal amplification includes a first electrode adapted for receiving a first voltage, and for transmitting received photons. An absorption layer is disposed adjacent the first electrode and comprises a P-type semiconductor material having a forbidden band of sufficiently small width to cause photons received through said first electrode to be converted into electron-hole pairs. At least one ionization-induced electron multiplication layer is disposed adjacent the absorption layer. Each such multiplication layer comprises two layers of N-type semiconductor material having respectively two different compositions at an interface therebetween. The two different compositions at the interface cause the multiplication layer, when biased, to accelerate the electrons received from the absorption layer to a degree greater than the acceleration provided to the holes received from the absorption layer. A second electrode is disposed adjacent the multiplication layer and receives a second voltage to cause the photocathode to be biased. In addition, the second electrode transmits the accelerated electrons received from the multiplication layer. An emission layer is disposed adjacent the second electrode and comprises a material which produces negative electron affinity to cause the accelerated electrons received from the second electrode to be emitted into a vacuum.

REFERENCES:
patent: 3631303 (1971-12-01), Antypas
patent: 4088515 (1978-05-01), Blakeslee et al.
patent: 4286275 (1981-08-01), Heiblum
patent: 4383269 (1983-05-01), Capasso
patent: 4390889 (1983-06-01), Capasso et al.
patent: 4597004 (1986-06-01), Longeway et al.
patent: 4599632 (1986-07-01), Bethea et al.
"Photoelectric Imaging in the 0.9-1.6 Micron Range", J. S. Escher, P. E. Gregory, S. B. Hyder, R. R. Saxena and R. L. Bell, vol. EDL-2, No. 5, May 1981.
Summers et al., "Variably Spaces Superlattice Energy Filter, a New Device Design Concept for High Energy Electron Injection", Appl. Phys. Lett, 48(12), 24 Mar. 1986, pp. 806-808.
Chin et al., "Impact Ionization in Multilayered Heterojunction Structure", Electronics Letters, 5 Jun. 1980, vol. 16, No. 12, pp. 467-469.
Capasso et al., "The Superlattice Photodetectors a New Avalanche Protodiode with a Large Ionization Rates Ratio", Conference: Int'l. Electron Devices Meeting, IEEE, (Dec. 7-9, 1981), D.C., 284-287.
Fischer et al., IEEE-EDL 2, 123-125 (1981).

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