Photocathode and image intensifier tube having an active layer c

Details Photocathode and image intensifier tube having an active layer c Photocathode and image intensifier tube having an active layer c

1999-07-22

2000-09-12

Ramsey, Kenneth J.

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

445 35, H01J 4006

Patent

active

061169765

ABSTRACT:
A novel photocathode and image intensifier tube include an active layer comprised substantially of amorphic diamond-like carbon, diamond, or a combination of both. The photocathode has a face plate coupled to an active layer. The active layer is operable to emit electrons in response to photons striking the face plate.

REFERENCES:
patent: 3894258 (1975-07-01), Buttrewick
patent: 3906277 (1975-09-01), Schade
patent: 3914136 (1975-10-01), Kressel
patent: 3951698 (1976-04-01), Wilson et al.
patent: 3960620 (1976-06-01), Ettenberg
patent: 4096511 (1978-06-01), Gurnell et al.
patent: 4115223 (1978-09-01), Thrush
patent: 4563614 (1986-01-01), Howorth
patent: 4644221 (1987-02-01), Gutierrez et al.
patent: 4980312 (1990-12-01), Harris et al.
patent: 5268570 (1993-12-01), Kim
patent: 5506402 (1996-04-01), Estrera et al.
patent: 5578901 (1996-11-01), Blanchet-Fincher et al.
patent: 5619091 (1997-04-01), Anderson et al.
patent: 5684360 (1997-11-01), Baum et al.
patent: 5703435 (1997-12-01), Kumar et al.
D.G. Fisher, R.E. Enstrom, J.S. Escher, H.F. Gossenberger, and J.R. Appert, Photoemission Characteristics of Transmission-Mode Negative Electron Affinity GaAs and (In,Ga)As Vapor-Grown Structures, IEEE Transactions on Electron Devices, vol. ED-21, No. 10 pp. 641-649 (1974).
R.E. Nahory, M.A. Pollack, and J.C. DeWinter, Growth and characterization of liquid-phase epitaxial In.sub.x Ga.sub.1-x As, Journal of Applied Physics, vol. 46, No. 2 pp. 775-782 (1975).
A.H. Sommer, The element of luck in research-photocathodes 1930 to 1980, J. Vac. Sci. Technol. A 1 (2), pp. 119-124, Apr.-Jun. 1983.
G. Vergara, L.J. Gomez, J. Capmany and M.T. Montojo, Adsorption kinetics of cesium and oxygen on GaAs (100), Surface Science 278 pp. 131-145 (1992).
D.G. Fisher, R.E. Enstrom, J.S. Escher, and B.F. Williams, Photoelectron surface escape probability of (Ga,In)As: Cs-O In the 0.9 to .apprxeq. 1.6 .mu.m range*, J. Appl. Phys. vol. 43, No. 9, pp. 3815-3823 (1972).
R.L. Bell, L.W. James, and R.L. Moon, Transferred electron photoemission from InP.dagger., Appl. Phys. Letters, vol. 25, No. 11, pp. 645-646 (1974).
J.S. Escher and R. Sankaran, Transferred Electron Photoemission to 1.4 .mu.m, Appl. Phys. Lett. 29, 87 (1976).
J.S. Escher, P.E. Gregory, S.B. Hyder, and R. Sankaran, Transferred-electron photoemission to 1.65 .mu.m from InGaAs .sup. a), J. Appl. Phys. 49(4), pp. 2591-2592 (1978).
P.E. Gregory, J.S. Escher, S.B. Hyder, Y.M. Houng, and G.A. Antypas, Field-assisted minority carrier electron transport across a p-InGaAs/ p-InP heterojunction .sup.a), J. Vac. Sci. Technol. 15(4), pp. 1473-1487 (1978).
J.S. Escher, R.L. Bell, P.E. Gregory, S.Y. Hyder, T.J. Maloney, and G.A. Antypas, Field-Assisted Semiconductor Photoemitters for the 1-2 .mu.m Range, IEEE Transactions on Electron Devices ED-27, No. 7, pp. 1244-1250 (1980).
J.S. Escher, P.E. Gregory, S.B. Hyder, R.R. Saxena, and R.L. Bell, Photoelectric Imaging in the 0.9-1.6 Micron Range*, IEEE Electron Device Letters, vol. EDL-2, No. 5, pp. 123-125 (1981).
K. Costello, G. Davis, R. Weiss, and V. Aebi, SPIE Proceedings,: Electron Image Tubes and Image Intensifiers II, vol. 1449 (1991).
I.P Csorba, Recent advancements in the field of image intensification: the generation 3 wafer tube, Applied Optics, vol. 18(14), pp. 2440-2444 (Jul. 1979).
I.P. Csorba, Current Status of Image Intensification, Miltronics, pp. 2-11 (Mar./May 1981).
I.P. Csorba, Current Status and Performance Characteristics of Night Vision Aids, Opto-Electronic Imaging, Chapter 3, pp. 34-63 (1985).
K.A. Costello, V.W. Aebi and H.F. MacMillan, Imaging GaAs Vacuum Photodiode with 40% Quantum Efficiency at 530 nm, SPIE vol. 1243 Electron Image Tubes and Image Intensifiers pp. 99-104 (1990).
A.A. Narayanan, D.G. Fisher, L.P. Erickson and G.D. O'Clock, Negative electron affinity gallium arsenide photocathode grown by molecular beam epitaxy, J. Appl. Phys. vol. 56(6) pp. 1886-1887 Sep. 15, 1984.
Stringfellow, G.B., "Lattice Parameters and Crystal Structure of Indium-Gallium-Arsenide," Properties of Lattice-Matched and Strained Indium-Gallium-Arsenidei, P. Bhattacharya, Edit, Institution of Electrical Engineers, London, United Kingdom, 1993.
Takahashi, N.S., "Lattice Parameters, Molecular and Crystal Densitites of Aluminun-Gallium-Arsenide," Properties of Aluminum-Gallium-Arsenide, S. Adachi, Editor, Institution of Electrical Engineers, London, United Kingdom, 1993.

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