Photocathode and electron tube having enhanced absorption edge c

Details Photocathode and electron tube having enhanced absorption edge c Photocathode and electron tube having enhanced absorption edge c

1997-04-10

1999-11-09

Patel, Vip

Electric lamp and discharge devices

Photosensitive

Photocathode

313544, 313532, 313534, H01J 4006

Patent

active

059820934

ABSTRACT:
The present invention relates to a photocathode having a structure for improving the quantum efficiency and sharpening the absorption edge characteristic on the long wavelength side within the wavelength range of incident light to improve the photosensitivity, and an electron tube having the same. The photocathode according to the present invention comprises at least a p-type GaAlN layer for absorbing incident light to excite photoelectrons, a p-type GaN layer which covers the second major surface of the p-type GaAlN layer, the second major surface opposing a first major surface that faces a substrate, and a surface layer provided to sandwich the p-type GaN layer with the p-type GaAlN layer and mainly containing an alkali metal or an alkali metal oxide.

REFERENCES:
patent: 3387161 (1968-06-01), Van Laar et al.
patent: 3986065 (1976-10-01), Pankove
patent: 4616248 (1986-10-01), Khan et al.
patent: 5471051 (1995-11-01), Niigaki et al.
patent: 5557167 (1996-09-01), Kim et al.

Affiliated with

Also associated with

Rating

Photocathode and electron tube having enhanced absorption edge c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photocathode and electron tube having enhanced absorption edge c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photocathode and electron tube having enhanced absorption edge c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1460796