1988-05-12
1990-03-06
Edlow, Martin H.
357 2, 357 16, 357 31, 357 52, H01L 2714, H01L 4500
Patent
active
049070517
ABSTRACT:
A photocathode with high photoelectric conversion ratio over an extended wavelength range of incident light has a hetero junction formed between thin films of a p-type amorphous silicon alloy having energy gap matching the energy of the incident light and an n-type semiconductor with small work function or large coefficient of secondary electron emission.
REFERENCES:
patent: 3632442 (1972-01-01), Turnbull
patent: 3644770 (1972-02-01), Bell
patent: 4107564 (1978-08-01), Klimin et al.
patent: 4612559 (1956-09-01), Hilotsuyanagi et al.
patent: 4710786 (1987-12-01), Ovshinsky et al.
Edlow Martin H.
Meier Stephen D.
Sharp Kabushiki Kaisha
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