Photo-transistor in MOS thin-film technology and method for prod

Details Photo-transistor in MOS thin-film technology and method for prod Photo-transistor in MOS thin-film technology and method for prod

1982-10-28

1989-04-18

James, Andrew J.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 237, 357 4, 357 59, 250211J, H01L 2714, H01L 3110

Patent

active

048231800

ABSTRACT:
A photo-transistor in MOS thin-film technology operable with alternating voltages is comprised of a semiconductor body (3) composed of polycrystalline silicon having source (4) and drain (5) zones therein spaced apart by an undoped channel region (13) and having a gate electrode (1, 10) separated from the semiconductor body (3) by a SiO.sub.2 layer (2) produced by thermal oxidation. These phototransistors are easily and reproducably produced and are characterized by low threshold voltages and a good transistor characteristic curve. Thus, these photo-transistors are well suited for use as sensor elements, opto-couplers, time-delay elements and as photo-transistors in VLSI circuits.

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"Floating Gate . . . Device", RCA Tech. Notes, 1152, May 24, 1976, Medwin et al., p. 2.
G. Hass and R. E. Thun, Physics of Thin-Films, vol. 2, Acedemic Press 1964; P. K. Weimer, "The Insulated Gate Thin Film Transistor", pp. 147-192 at 187.

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