Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-12-05
2006-12-05
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S692000, C257S693000, C257S738000, C257S737000, C257SE21584, C257SE23148, C257SE21347, C427S553000, C427S554000, C427S555000, C427S402000, C428S644000, C428S646000, C428S647000, C428S614000
Reexamination Certificate
active
07145243
ABSTRACT:
Formation of a mixed-material composition through diffusion using photo-thermal energy. The diffusion may be used to create electrically conductive traces. The diffusion may take place between material layers on one of a package substrate, semiconductor substrate, substrate for a printed circuit board (PCB), or other multi-layered substrate. The photo-thermal energy may be supplied by various devices, for example a YAG laser device, CO2laser device, or other energy source.
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International Search Report PCT/US 03/28926.
PCT Written Opinion.
Brist Gary A.
Long Gary B.
Sato Daryl A.
Anya Igwe U.
Baumeister B. William
Blakely , Sokoloff, Taylor & Zafman LLP
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