Photo-shield structure of charge-coupled device

Details Photo-shield structure of charge-coupled device Photo-shield structure of charge-coupled device

1993-03-25

1995-03-21

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257250, 257435, H01L 29796, H01L 2714, H01L 3100

Patent

active

053998880

ABSTRACT:
A charge-coupled device has a metal wiring which serves both as a wiring for supplying a predetermined potential to charge transfer electrodes constituting a vertical charge transfer section and as a photo-shield for the vertical charge transfer section. The metal wiring is formed from a metal film, a refractory metal film or its silicides. The device has a photoelectric conversion section arranged in a two dimensional form and having a vertical bordering region at which the width of the metal wiring is wider than that of other regions. It is possible to suppress the generation of the false signal caused by smear phenomena without suffering from the lowering of the sensitivity of the device.

REFERENCES:
patent: 5250825 (1993-10-01), Negishi et al.
patent: 5255099 (1993-10-01), Orihara
patent: 5256890 (1993-10-01), Furukawa et al.
patent: 5256891 (1993-10-01), Losee et al.
"A Frame Interline Transfer CCD Image Sensor for HDTV Camera System", ISSCC Digest of Technical Papers, pp. 88-89, 301 Feb. 1989.

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