Photo sensor with monolithic differential amplifier

Amplifiers – Signal feedback – Combined with control of bias voltage of signal amplifier

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357 59, 357 58, 330253, H01L 2714

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active

051012537

ABSTRACT:
There is a photosensor in which a photoelectric converter having a P-N junction and an amplifying section having a bipolar transistor to amplify an output of this converter are integrally formed in a semiconductor substrate. The input stage of the amplifying section has an insulating gate type transistor, and the output of the photoelectric converter is inputted to the gate electrode of this transistor. The photosensing surface of the photoelectric converter is covered by a transparent protection film, and a thickness of this film is determined so as to make the reflection factor of the incident light at the photosensing surface of the photoelectric converter zero. In the manufacturing of this photosensor, the base region of the bipolar transistor and one region of the P-N junction of the photoelectric converter of the same conductivity type as the base region are simultaneously formed.

REFERENCES:
patent: 4266237 (1981-05-01), Hendrickson
patent: 4346395 (1982-08-01), Ouchi
patent: 4389534 (1983-06-01), Winterling
patent: 4488038 (1984-12-01), Harrison et al.
patent: 4523217 (1985-06-01), Jibu
patent: 4625225 (1986-11-01), Goodfellow et al.
patent: 4636829 (1987-01-01), Greenwood et al.
patent: 4651016 (1987-03-01), Hirao
Sebko et al., "Photoamplifier having Dynamic Compensation of the Temperature Drift of the D-C Component of Photodetectors", Sov. J. Opt. Technol., 46(8), Aug. '79, 486-7.
Schade, "A New Generation of MOS/Bipolar Operational Amplifiers", RCA Review, vol. 37, No. 3, Sep. 1976, pp. 404-424.
Dereniak et al., "Low-Noise Preamplifier for Photoconductive Detectors", Rev. Sci. Instrum., vol. 48, No. 4 (Apr. 1977), pp. 392-394.

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