Photo sensor with a low-noise photo element, sub-linear...

Details Photo sensor with a low-noise photo element, sub-linear... Photo sensor with a low-noise photo element, sub-linear...

2011-07-05

2011-07-05

Tran, Nhan T (Department: 2622)

Television

Camera, system and detail

Solid-state image sensor

C250S208100, C257S291000, C257S292000

Reexamination Certificate

active

07973841

ABSTRACT:
A photo sensor exhibiting low noise, low smear, low dark current, high dynamic range and global shutter functionality consists either of a pinned (or buried) photodiode or a photo-sensitive charge-coupled device, each with associated transfer gate, a sub-linear element, a shutter transistor, a reset circuit and a read-out circuit. Using two output paths global shutter and high speed operation are possible for the linear and the sub-linear output of the sensor. Because of its compact size, the photo sensor can be employed in one- and two-dimensional image sensors, fabricated with industry-standard CMOS and CCD technologies.

REFERENCES:
patent: 6815685 (2004-11-01), Wany
patent: 7170041 (2007-01-01), Rahn
patent: 7235772 (2007-06-01), Ko et al.
patent: 7683954 (2010-03-01), Ichikawa et al.
patent: 2005/0092894 (2005-05-01), Fossum
patent: 2006/0219868 (2006-10-01), Morimoto et al.
patent: 2006/0255380 (2006-11-01), Lee
patent: 2008/0173909 (2008-07-01), Parks
patent: 2008/0224186 (2008-09-01), Ellis-Monaghan et al.
patent: WO2007115415 (2007-10-01), None

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