Photo sensor and method for forming the same

Details Photo sensor and method for forming the same Photo sensor and method for forming the same

1997-05-27

1999-01-12

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 73, 438 78, H02L 21328

Patent

active

058588108

ABSTRACT:
A semiconductor photosensitive element comprises first and second photosensitive regions. The first photosensitive region is different from the second photosensitive region in its structure and thereby the first photosensitive region has photoelectric conversion characteristic and frequency characteristic which are different from those of the second photosensitive region. A method for forming a semiconductor photosensitive element includes steps of forming a high concentration impurity region of a first conductivity type and an element isolation region on a semiconductor of the first conductivity type, forming a semiconductor layer of a second conductivity type on the semiconductor substrate and high concentration impurity region, thereby to form a first photosensitive region formed of the high concentration impurity region 10 formed on the semiconductor substrate and the photoelectric conversion layer consisting of the semiconductor layer and a second photosensitive region formed of the photoelectric conversion layer consisting of the semiconductor layer formed on the semiconductor substrate.

REFERENCES:
patent: 4387429 (1983-06-01), Umezawa et al.
patent: 4585933 (1986-04-01), Ando
patent: 5105249 (1992-04-01), Bierhoff et al.
patent: 5106765 (1992-04-01), Mizutani et al.
patent: 5268309 (1993-12-01), Mizutani et al.

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