Photo sensor

Details Photo sensor Photo sensor

1994-05-27

1996-01-09

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 53, 257452, 257436, 257444, 257448, 257451, 257459, 257464, 257640, 257648, 257652, H01L 3108, H01L 2714, H01L 2348, H01L 2941

Patent

active

054830966

ABSTRACT:
A photo sensor comprises a semiconductor substrate, a bipolar photo transistor having an emitter region, a base region and a collector region which is formed in the surface region of the semiconductor substrate, a silicon dioxide formed on the bipolar phototransistor, and a film having a smaller diffusion coefficient of hydrogen than the silicon dioxide formed all over the silicon dioxide.

REFERENCES:
patent: 4794443 (1988-12-01), Tanaka et al.
patent: 5065222 (1991-11-01), Ishii

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