Photo sensing element array substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S043000, C257S040000, C257S222000, C257S225000, C257S257000, C257S290000, C257SE29296, C257SE51026, C257SE31001, C257SE31054, C257SE31071, C257SE31101, C257SE31107

Reexamination Certificate

active

08076741

ABSTRACT:
A photo sensing element array substrate is provided. The photo sensing element array substrate includes a flexible substrate and a plurality of photo sensing elements. The photo sensing elements are disposed in array on the flexible substrate. Each of the photo sensing elements includes a photo sensing thin film transistor (TFT), an oxide semiconductor TFT and a capacitor. The photo sensing TFT is disposed on the flexible substrate. The oxide semiconductor TFT is disposed on the flexible substrate. The oxide semiconductor TFT is electrically connected to the photo sensing TFT. The capacitor is disposed on the flexible substrate and electrically connected between the photo sensing TFT and the oxide semiconductor TFT. When the photo sensing element array substrate is bent, it remains unaffected from normal operation.

REFERENCES:
patent: 6953978 (2005-10-01), Chang et al.
patent: 7256764 (2007-08-01), Izumi
patent: 7612368 (2009-11-01), Yu
patent: 2005/0285985 (2005-12-01), Boer et al.
Nomura et al. (2004) “Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Oxide Semiconductors,” Nature 432:488-492.

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