Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1993-09-09
1994-05-24
LaRoche, Eugene R.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257459, 257461, 257743, 257744, H01L 3110
Patent
active
053151488
ABSTRACT:
A region of a second conductivity type is selectively formed in a portion of a semiconductive layer of a first conductivity type to form a pn junction area which serves as a photo-sensing region. A metal film is formed on a surface of the semiconductive layer of the first conductivity type to surround the photo-sensing region. When light to be directed to the photo-sensing region spreads outside the photo-sensing region, the light is reflected by the metal film provided on the surface of the semiconductive crystal layer around the photo-sensing region. Accordingly, the light does not reach the photo-sensing layer of the semiconductive crystal layer and the generation of undesired carriers is prevented.
REFERENCES:
patent: 4903103 (1990-02-01), Yamashita et al.
patent: 5057891 (1991-10-01), Torikai
European Search Report and Annex.
Patent Abstracts of Japan, vol. 10, No. 24, Jan. 30, 1986 & JP-A-60 182778 (Fujitsu) Sep. 18, 1985.
Patent Abstracts of Japan, vol. 3, No. 129, Oct. 26, 1979 & JP-A-54 107376 (Nippon Denki K.K.) Aug. 23, 1979.
C. S. Yin et al, "High Quantum Efficiency p+/pi
-
+ Silicon Photodiode", IEE Proceedings J. Optoelectronics, vol. 137, No. 3 Jun. 1990, Stevenage GB, pp. 171-173.
S. Kagawa et al, "Wide-wavelength InGaAs/InP PIN Photodiodes Sensitive From 0.7 to 1.6 mum", Japanese Journal of Applied Physics, vol. 28, No. 10, Oct. 1989, Tokyo JP pp. 1843-1846.
LaRoche Eugene R.
Nguyen Viet Q.
Sumitomo Electric Industries Ltd.
LandOfFree
Photo-sensing device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photo-sensing device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photo-sensing device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1974788