Photo-sensing device

Details Photo-sensing device Photo-sensing device

1993-07-20

1994-11-15

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257435, H01C 2390

Patent

active

053651014

ABSTRACT:
A bottom-incidence type photo-sensing device has a pn junction, as a photo-sensing region, formed by selectively providing a first region of a second conductivity type in a portion of a semiconductive layer of a first conductivity type. The first region is surrounded by a second region of the second conductivity type formed in the semiconductive layer, and the second region is of the same or larger depth as or that of the first region. Even when light is directed to outside of the photo-sensing region, extra charges generated therein are absorbed by the second region and the flow of extra charges into the photo-sensing region is prevented.

REFERENCES:
C. S. Yin et al, "High Quantum Efficiency p+/pi
-/N+ Silicon Photodiode", IEE Proceedings J. Optoelectronics, vol. 137, No. 3 Jun. 1990, Stevenage GB, pp. 171-173.
S. Kagawa et al, "Wide-wavelength-InGaAs/InP PIN Photodiodes Sensitive from 0.7 to 1.6 mum", Japanese Journal of Applied Physics vol. 28, No. 10, Oct. 1989, Tokyo JP pp. 1843-1846.

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