Photo masks for developing planar layers in a semiconductor devi

Details Photo masks for developing planar layers in a semiconductor devi Photo masks for developing planar layers in a semiconductor devi

1996-06-18

1999-01-12

Nuzzolillo, M.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

058585788

ABSTRACT:
The semiconductor masking device of the invention includes a first semiconductor mask for forming an interconnection on a semiconductor substrate and a second semiconductor mask for forming a resist pattern on an insulating film. The first semiconductor mask has three masking areas and the second semiconductor mask has two masking areas. Masking area intervals, that is, the distances between the three masking areas of the first semiconductor mask and the two masking areas of the second semiconductor mask, are all equal to one another.

REFERENCES:
patent: 5189506 (1993-02-01), Cronin et al.
patent: 5418092 (1995-05-01), Okamoto

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