Photo mask for a process margin test and a method for performing

Details Photo mask for a process margin test and a method for performing Photo mask for a process margin test and a method for performing

1997-06-02

1998-07-07

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 22, G03F 900

Patent

active

057766401

ABSTRACT:
A photo mask capable of reducing the time taken to carry out a process margin test and a method for performing a process margin test using the photo mask. The method includes the steps of preparing a wafer, coating a photoresist film over the wafer, performing a light exposure and development process for the photoresist film using a photo mask over which a plurality of unit patterns each consisting of three different process margin patterns are arranged, thereby forming a photoresist film pattern, and comparing an image of the photoresist film pattern with data about the process margin patterns of the photo mask stored in a CAD, thereby performing a process margin test.

REFERENCES:
patent: 4530891 (1985-07-01), Nagarekawa et al.
patent: 4657648 (1987-04-01), Nagarekawa et al.
patent: 4696877 (1987-09-01), Matsui et al.
patent: 5468580 (1995-11-01), Tanaka
patent: 5498500 (1996-03-01), Bae

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