Photo mask blank and photo mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

active

10834919

ABSTRACT:
There is disclosed a photo mask blank comprising at least a light-shielding film containing Cr and one or more layers of an anti-reflection film disposed on a substrate, wherein at least one layer of the anti-reflection film contains any one selected from the group consisting of silicon oxide, silicon nitride and silicon oxynitride. And there is also disclosed a photo mask blank comprising at least a light-shielding film containing Cr and two or more layers of an anti-reflection film disposed on a substrate, wherein the anti-reflection film comprises at least a layer of film with high transmittance at exposure wavelength, and a layer of film with lower transmittance at exposure wavelength than that of the layer and higher transmittance at inspection wavelength than at that exposure wavelength. Thus, there can be provided a photo mask blank having an anti-reflection film that can sufficiently reduce reflectance even if the exposure wavelength is short.

REFERENCES:
patent: 6919146 (2005-07-01), Corliss et al.
patent: 7026076 (2006-04-01), Wasson et al.
patent: 7118832 (2006-10-01), Yan
patent: A 57-104141 (1982-06-01), None
patent: A 57-151945 (1982-09-01), None
patent: A 59-090853 (1984-05-01), None
patent: A 60-095437 (1985-05-01), None

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