Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1993-03-31
1995-08-22
Rosasco, Steve
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430324, 430325, G03F 900
Patent
active
054439310
ABSTRACT:
A light-shield film pattern and a phase shifter are formed on a transparent substrate. An applied oxide film is used as the phase shifter. On this phase shift mask, a phase shifter defect is present. On the phase shift mask containing the phase shifter defect, a silicon-containing resist is applied. At this time, the film thickness of the resist is 50 nm in the flat part. Herein, the phase shifter defect is supposed to be a bump defect. When the resist is formed in a film thickness of 50 nm, the phase difference of the light entering through the film thickness is about 30 degrees. This resist is exposed with electron beam in a region including the periphery of the defect. After electron beam exposure, it is developed. Since the silicon-containing resist is a negative resist, only the region irradiated with electron beam is left over after development. Since the resist has a mild slope, if exposed using this phase shift mask, the bump defect will not be projected. Thus, when the both sides of the bump defect are dull, if the defect height is more than the height of providing the light with a phase difference of 180 degrees, it will not be projected. When the both sides of the bump defect are moderate, the incident light also changes moderately in phase. In this case, the pattern is not projected.
REFERENCES:
patent: 3748975 (1973-07-01), Taraboccia
patent: 4751169 (1988-06-01), Behringer et al.
Matsushita Electronics Corporation
Rosasco Steve
LandOfFree
Photo mask and repair method of the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photo mask and repair method of the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photo mask and repair method of the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2140971