Photo mask and pattern forming method

Details Photo mask and pattern forming method Photo mask and pattern forming method

1997-09-04

1999-11-30

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

059940026

ABSTRACT:
A resist pattern is formed with a phase-shifting mask 4 in which transparent regions through an opaque region are different 180.degree. in phase from one another. In this case, when positive resist 1 is subjected to exposure, the widths of the opaque regions 5A and 5B of the mask 4 are changed according to a pattern adjacent thereto, so that a fine pattern having the same line width is formed with high accuracy.

REFERENCES:
patent: 5546225 (1996-08-01), Shiraishi
patent: 5573890 (1996-11-01), Spence

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