Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2006-02-28
2006-02-28
Mohamedulla, Saleha R. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
Reexamination Certificate
active
07005216
ABSTRACT:
Providing a photo mask for KrF excimer laser lithography, which can be produced with high accuracy and low defects in a smaller number of steps. A photo mask for KrF excimer laser lithography according to the present invention is one in which a resist pattern18efficiently absorbing a KrF excimer laser light (wavelength: about 248 nm) is formed directly on a quartz substrate10. The resist pattern18comprises: an aqueous alkali-soluble resin having a high light shielding property, which incorporates a naphthol structure having at least one hydroxyl group bound to a naphthalene nucleus; or a radiation sensitive resist having, as a main component, an aqueous alkali-soluble resin containing a derivative of the above-mentioned aqueous alkali-soluble resin as a resin matrix.
REFERENCES:
patent: 6653052 (2003-11-01), Tanaka et al.
patent: 04-136854 (1992-05-01), None
patent: 05-289307 (1993-11-01), None
Arai Tadashi
Hattori Takashi
Migitaka Sonoko
Sakamizu Toshio
Shiraishi Hiroshi
Antonelli, Terry Stout and Kraus, LLP.
Mohamedulla Saleha R.
Renesas Technology Corp.
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