Photo-lasertransistor

Details Photo-lasertransistor Photo-lasertransistor

1988-09-28

1990-11-06

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 357 34, H01S 319

Patent

active

049691520

ABSTRACT:
The invention relates to a photo-laser transistor with a base-collector pn-junction biased in the non-conducting direction and a base-emitter pn-junction biased in the conducting direction. With the invention, the functions of optical to electronic conversion, amplification, electrical to optical conversion, and, in particular, that of an optical repeater are to be realized in one single semiconductor element. For this purpose, the invention provides that the base-emitter pn-junction is formed as laser diode, that the laser diode is driven with a base precurrent to approximately its threshold value, and the residual current, which needs to be made available for stepping over the threshold, stems from the amplified photocurrent of the base-emitter pn-junction. The photo-laser transistor according to the invention is applied, in particular, as optical repeater, optical amplifier, optical bus connection building block, optical sensor, wavelength converter, opto-electrical logic respectively opto-electrical switch.

REFERENCES:
patent: 4176367 (1979-11-01), Uematsu
patent: 4349906 (1982-09-01), Scifres et al.
patent: 4845535 (1989-07-01), Yamanishi et al.
J. Campbell et al., "Optical Comparator: A New Application for Avalanche Phototransistors", IEEE Transactions on Electron Devices, vol. ED-30, No. 4, Apr. 1983, pp. 408-411.
"Operation Principle of the InGaAsP/InP Laser Transistor", Mori et al., Appl. Phys. Lett 47 (7), Oct. 1, 1985, pp. 649-651.
"Integrated Optical Devices of InGaAsP/InP Heterojunction Phototransistor and Inner . . . ", Sasaki et al, Journal of Lightwave Technology, LT-3, Dec. 1985, pp. 1264-1268.
"Efficient Semiconductor Anti-Stokes Light Converters", Beneking et al., Int'l Electron Devices Meeting, 12/9-11/74, Washington, DC, Technical Digest, IEEE, pp. 69-72.
Patent Abstracts of Japan, vol. 9, No. 332 (E-370) (2055), Dec. 26, 1985; & JP-A-60 164 369 (Nippon Denki K.K.) 27.08.1985.
Patent Abstracts of Japan, vol. 8, No. 25 (E-225) (1462), Feb. 2, 1984; & JP-A-58 186 979 (Tateishi Denki K.K.) 01.11.1983.
"InGaAsP-InP Heterojunction Phototransistors and Light Amplifiers", Sasaki et al., Japanese Journal of Applied Physics, vol. 20 (1981) Apr., No. 4, Tokyo, Japan, pp. L-283-286.

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