Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-09-06
1998-03-31
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 25, H01L 2906
Patent
active
057341745
ABSTRACT:
A photo hole burning memory device includes a quantum dot and a quantum well layer cooperating with the quantum dot for storing information and a periodic structure that creates a photonic bandgap, wherein the periodic structure includes a local irregularity that forms a level in the photonic bandgap.
REFERENCES:
patent: 5663571 (1997-09-01), Ugajin
Fujitsu Limited
Tran Minh-Loan
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