Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Patent
1996-12-10
1998-08-04
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
257103, 257458, H01L 2715, H01L 3112, H01L 31153, H01L 3300
Patent
active
057897654
ABSTRACT:
A photo diode in which an optical absorption layer and a p-type semiconductor layer neighboring on each other are designed to be at almost the same valence band level (their offset not exceeding 0.05 eV). Preferably the optical absorption layer is a GaInAsP layer with an absorption edge wavelength of 1.65 to 1.55 .mu.m, and the p-type semiconductor layer and lattice-matching with the preceding semiconductor layer are each an AlGaInAs layer with an absorption edge wavelength of 1.55 to 1.30 .mu.m remaining shorter than that of the optical absorption layer.
REFERENCES:
patent: 3398310 (1968-08-01), Larsen et al.
patent: 4365260 (1982-12-01), Holonyak, Jr.
patent: 5329135 (1994-07-01), Terakado
Irikawa Michinori
Nishikata Kazuaki
Meier Stephen
The Furukawa Electric Co. Ltd.
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