Photo detector with a quantum dot layer

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S009000, C257S012000, C257S184000, C257S414000, C257S428000, C257SE29071, C257SE29076, C257SE29168, C257SE49003

Reexamination Certificate

active

08076740

ABSTRACT:
A photo detector is provided with a plurality of quantum dot layers and first conductive type contact layers provided at both sides of the plurality of quantum dot layers so as to sandwich them; a second conductive type impurity is doped in a first semiconductor layer formed between one first conductive type contact layer and a first quantum dot layer which is closest to the one first conductive type contact layer so that it results in a barrier against a carrier positioned at the one first conductive contact layer.

REFERENCES:
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patent: 2005/0017176 (2005-01-01), Koch et al.
patent: 2005/0211873 (2005-09-01), Krishna et al.
patent: 2005/0211996 (2005-09-01), Krishna et al.
patent: 2006/0118983 (2006-06-01), Cochran et al.
patent: 2006/0222028 (2006-10-01), Hatori et al.
E.-T. Kim, et al; “Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1-xAs strain-relieving quantum wells;”Applied Physics Letters; vol. 79; No. 20; Nov. 12, 2001; pp. 3341-3342./Discussed in the specification.
E.-T. Kim, et al; “High detectivity InAs quantum dot infrared photodetectors;”Applied Physics Letters; vol. 84; No. 17; Apr. 26, 2004; pp. 3277-3279./Discussed in the specification.
“Japanese Office Action”, Mailed Aug. 25, 2009 from JP Patent Office for corresponding JP App. No. 2006-069232.
Chou, Shu-Ting “Quantum-Dot Infrared Photodetectors With p-Type-Doped GaAs Barrier Layers”,IEEE Photonics Technology Letters, vol. 17, No. 11 Nov. 2005, 2409-2411.
JPO Office Action mailed Dec. 15, 2009 in corresponding JP Patent Application No. 2006-069232, Full English translation.
Debdas Pal et al., “Uniformly doped InAs/GaAs quantum-dot infrared photodetectors with AlGaAs current block layer,”Proceedings of 2005 5thIEEE Conference on Nanotechnology, Nagoya, Japan, Jul. 2005 (English language).

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