Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-06-14
2011-12-13
Kim, Jay C (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S009000, C257S012000, C257S184000, C257S414000, C257S428000, C257SE29071, C257SE29076, C257SE29168, C257SE49003
Reexamination Certificate
active
08076740
ABSTRACT:
A photo detector is provided with a plurality of quantum dot layers and first conductive type contact layers provided at both sides of the plurality of quantum dot layers so as to sandwich them; a second conductive type impurity is doped in a first semiconductor layer formed between one first conductive type contact layer and a first quantum dot layer which is closest to the one first conductive type contact layer so that it results in a barrier against a carrier positioned at the one first conductive contact layer.
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E.-T. Kim, et al; “Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1-xAs strain-relieving quantum wells;”Applied Physics Letters; vol. 79; No. 20; Nov. 12, 2001; pp. 3341-3342./Discussed in the specification.
E.-T. Kim, et al; “High detectivity InAs quantum dot infrared photodetectors;”Applied Physics Letters; vol. 84; No. 17; Apr. 26, 2004; pp. 3277-3279./Discussed in the specification.
“Japanese Office Action”, Mailed Aug. 25, 2009 from JP Patent Office for corresponding JP App. No. 2006-069232.
Chou, Shu-Ting “Quantum-Dot Infrared Photodetectors With p-Type-Doped GaAs Barrier Layers”,IEEE Photonics Technology Letters, vol. 17, No. 11 Nov. 2005, 2409-2411.
JPO Office Action mailed Dec. 15, 2009 in corresponding JP Patent Application No. 2006-069232, Full English translation.
Debdas Pal et al., “Uniformly doped InAs/GaAs quantum-dot infrared photodetectors with AlGaAs current block layer,”Proceedings of 2005 5thIEEE Conference on Nanotechnology, Nagoya, Japan, Jul. 2005 (English language).
Nishino Hironori
Uchiyama Yasuhito
Fujitsu Limited
Fujitsu Patent Center
Kim Jay C
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