Photo detector, image sensor, photo-detection method, and...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S443000, C257SE31054, C257SE31001

Reexamination Certificate

active

07847362

ABSTRACT:
A photo detector includes a photoelectric conversion layer having a periodic structure made of a semiconductor material on a surface of the photoelectric conversion layer. In the photo detector, at least a part of a resonance region formed by the periodic structure is included in the photoelectric conversion layer of the photo detector.

REFERENCES:
patent: 5965875 (1999-10-01), Merrill
patent: 7109517 (2006-09-01), Zaidi
patent: 7129466 (2006-10-01), Iwasaki
patent: 7538357 (2009-05-01), Onishi et al.
patent: 2003/0127667 (2003-07-01), Inoue et al.
patent: 2004/0248331 (2004-12-01), Cox et al.
patent: 2005/0205958 (2005-09-01), Taniguchi et al.
patent: 2003-142674 (2003-05-01), None
patent: 2005-268609 (2005-09-01), None
patent: 2007-13065 (2007-01-01), None
patent: WO2005/092037 (2005-06-01), None

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