1977-12-30
1979-06-05
Edlow, Martin H.
357 48, 357 89, 357 88, H01L 2714
Patent
active
041575601
ABSTRACT:
A smaller, faster, more efficient photo detector cell can be created with improved photo sensitivity in the short wavelength regions, using well known integrated circuit production techniques, by forming the photo sensitive junction of the device in an isolated region of a thin epitaxial layer overlying a thin subcollector so as to use all the current generated in the cell. The cell thus comprises a semiconductor body having an epitaxial layer thereon which is divided into isolated pockets containing a photosensitive junction overlying a subcollector region formed at a depth of less than 10 microns between the substrate and the epitaxial layer. The photo sensitive junction of the device merges with the isolation region so that a single continuous P-N junction surrounds substantially all subcollectors and the isolated pocket of epitaxial material. A device constructed as taught realizes approximately 100% quantum efficiency over a wide range of incident light.
REFERENCES:
patent: 3529217 (1970-09-01), Van Santen
patent: 3812518 (1974-05-01), Kurz
patent: 3836793 (1974-09-01), Haitz
patent: 3968511 (1976-07-01), Yogi
patent: 3994012 (1976-11-01), Warner, Jr.
Edlow Martin H.
International Business Machines - Corporation
Thornton Francis J.
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