Photo detector and method for forming thereof

Details Photo detector and method for forming thereof Photo detector and method for forming thereof

2009-08-17

2011-11-22

Bryant, Kiesha (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE31110, C345S084000

Reexamination Certificate

active

08063464

ABSTRACT:
A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a portion of the interlayer dielectric layer. The semiconductor layer has a first doping region, a second doping region, and an intrinsic region located between the first doping region and the second doping region. The interlayer dielectric layer has at least three holes to expose a portion of the insulating layer, a portion of the first doping region, and the second doping region. The electrodes are connected to the first doping region and the second doping region through two of the holes.

REFERENCES:
patent: 2005/0136566 (2005-06-01), Morse
patent: 2006/0216937 (2006-09-01), Dunton
patent: 2008/0284341 (2008-11-01), Weng
patent: 2009/0101915 (2009-04-01), Weng et al.
patent: 200514465 (2005-04-01), None

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