Photo-detection device and manufacturing method thereof

Details Photo-detection device and manufacturing method thereof Photo-detection device and manufacturing method thereof

2003-10-08

2009-06-09

Nguyen, Ha Tran T (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C438S057000

Reexamination Certificate

active

07545015

ABSTRACT:
A photodetection device is provided that includes a semiconductor substrate having a back surface which serves as a light-incident surface, and a front surface which opposes the back surface and is provided with a CCD reading part that detects light propagating from the back surface; a cooling device cooling the CCD reading part; and a package having a cavity that houses the semiconductor substrate and cooling device. The semiconductor substrate is fixed to a cavity bottom part of the package via the cooling device, and at the back surface thereof, a portion corresponding to a region at which the CCD reading part is disposed, is made thin. The cooling device has a cooling surface contacting the front surface of the semiconductor substrate while covering the region at which the CCD reading part is disposed.

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