Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-04-24
2007-04-24
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S347000, C257SE21561, C257SE27112
Reexamination Certificate
active
11082690
ABSTRACT:
A photo-detecting device that enables a solid-state image sensor to meet the requirement of higher quality imaging including: a first silicon substrate120having p- and n-type regions; a first SOI substrate130in which a second silicon substrate132having p- and n-type regions is formed on a first SOI insulation layer131;and a second SOI substrate140in which a third silicon substrate142having p- and n-type regions is formed on a second SOI insulation layer141.Each pn-junction of the first silicon substrate120,the second silicon substrate132,and the third silicon substrate142forms a photodiode for converting incident light into electric charges. The depth of each pn-junction, which is measured from the surface of the second SOI substrate140irradiated with the light, is determined according to absorption length of light to be converted into electric charges.
REFERENCES:
patent: 5965875 (1999-10-01), Merrill
patent: 2002/0101895 (2002-08-01), Augusto
patent: 5-183139 (1993-07-01), None
English Language Abstract of JP 5-183139.
Greenblum & Bernstein P.L.C.
Huynh Andy
Taylor Earl N.
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