Photo-conductor, radiation detector, and radiation imaging...

Details Photo-conductor, radiation detector, and radiation imaging... Photo-conductor, radiation detector, and radiation imaging...

2007-11-21

2009-06-09

Hannaher, Constantine (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

C250S591000

Reexamination Certificate

active

07544946

ABSTRACT:
A photo-conductor, which is adapted for use in constituting a radiation detector and which is capable of forming electric charges by being exposed to radiation, contains Bi12MO20, in which M represents at least one kind of element selected from the group consisting of Ge, Si, and Ti. The photo-conductor has characteristics such that a proportion of a diffuse reflectivity at a wavelength of 450 nm with respect to the diffuse reflectivity at a wavelength of 600 nm is equal to at least 75%.

REFERENCES:
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patent: 2000249769 (2000-09-01), None
S. L. Hou et al., “Transport processes of photoinduced carriers in Bi12SiO20”, J. Appl. Phys., Jun. 1973, pp. 2652-2658, vol. 44, No. 6.
B. C. Grabmaier et al., “Properties of Pure and Doped Bi12GeO20 and Bi12SiO20 Crystals”, Phys. Stat. Sol. (a)96, 1986, pp. 199-210.
R.E. Aldrich et al., “Electrical and Optical Properties of Bi12SiO20”, J. Appl. Phys., 1971, pp. 493-494, vol. 42.
M. T. Santos et al., “Analysis of the Core in Bi12SiO20 and Bi12GeO20 Crystals Grown by the Czochralski Method”, Mater. Res. Bull., 1996, pp. 389-396, vol. 31, No. 4.
John Larkin et al., “Hydrothermal growth of Bismuth Silicate (BSO)”, J. Crystal Growth, 1993, pp. 871-875, vol. 128.
H. S. Horowitz et al., “Solution Synthesis and Characterization of Sillenite Phases, Bi24M2O40 (M=Si, Ge, V, As, P)”, Solid State Ionics, 1989, pp. 678-692, vols. 32/33.

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