Photo-chemical vapor deposition of silicon nitride film

Details Photo-chemical vapor deposition of silicon nitride film Photo-chemical vapor deposition of silicon nitride film

1984-05-24

1986-05-13

Newsome, John H.

Coating processes

Electrical product produced

Welding electrode

427 94, B05D 306

Patent

active

045886105

ABSTRACT:
A photo-chemical vapor deposition of a silicon nitride (Si.sub.3 N.sub.4) film which includes the step of irradiating a gas mixture of monosilane (or polysilane) and ammonia (NH.sub.3) or hydrazine (N.sub.2 H.sub.4) gas but without mercury vapor by ultraviolet light having a wavelength of 200 nm (or 300 nm) or less to deposit the silicon nitride (Si.sub.3 N.sub.4) film having a charge density of 1.times.10.sup.11 cm.sup.-2 or less on a substrate held at 100.degree.-500.degree. C. in a reaction chamber held under a pressure of 0.1 to 10 Torr.

REFERENCES:
patent: 3798061 (1974-03-01), Yamazaki
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4435445 (1984-03-01), Allred et al.
Phillips, "Chem. Abstracts" vol. 70 (1969), p. 362, #101099q.

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