Coating apparatus – Gas or vapor deposition – With treating means
Patent
1988-12-09
1990-02-20
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
427 531, 427 541, C23C 1600
Patent
active
049016687
ABSTRACT:
In a photo-CVD apparatus, a holder on which an article is held is provided in a main chamber. The holder is moved in a predetermined direction to coincide a predetermined point of the article with a imaging point of light radiated from a light source, so that a thin film is grown on the predetermined point of the article. A process chamber is defined on the holder of the main chamber is accordance with the separation of a seal wall. Process gas is supplied to the process chamber for the growing of the thin film on the article, while inert gas is supplied to the remaining portion of the main chamber. A gas pressure of the main chamber is slightly greater than that of the process chamber, so that the process gas is prevented from flowing to the main chamber. For this structure, a size of the process chamber can be small, so that a consumption of process gas is decreased.
REFERENCES:
patent: 4543270 (1985-09-01), Oprysko
patent: 4581248 (1986-04-01), Roche
patent: 4595601 (1986-06-01), Horioka
patent: 4608117 (1986-08-01), Ehrlich
G. Hearn, "Repair of Both Clear and Opaque Mask Defects", Microelectronic Manufacturing and Testing (Oct. 1985), pp. 19-20.
"Argon Laser Cuts Reticle Repair Time", Lasers & Applications (Oct. 1985), p. 34.
M. M. Oprysko et al., "Repair of Clear Photomask Defects by Laser-Pyrolytic Deposition", Semiconductor International (Jan. 1986), pp. 90-100
Bueker Richard
NEC Corporation
LandOfFree
Photo-chemical vapor deposition apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Photo-chemical vapor deposition apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photo-chemical vapor deposition apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1608658