Photo-assisted nitrogen doping of II-VI semiconductor compounds

Details Photo-assisted nitrogen doping of II-VI semiconductor compounds Photo-assisted nitrogen doping of II-VI semiconductor compounds

1994-06-15

1996-08-20

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437106, 437107, 437942, 437965, 148DIG64, H01L 2122

Patent

active

055478972

ABSTRACT:
The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is within the range of 200-250 nm.

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Journal Of Electronic Materials, vol. 23, No. 3, Mar. 1994, Shizou Fujita et al, "Nitrogen Doping In ZnSe By Photo-Assisted Metalorganic Vapor Phase Epitaxy", pp. 263-268.
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Jpn. J. Appl. Phys., vol. 32, No. 8B, Aug. 1993, Shizuo Fujita et al, "Photoassisted Metalorganic Vapor-Phase Epitaxy Of Nitrogen-Doped ZnSe Using Tertiarybutylamine As Doping Source", pp. 1153-1156.
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Jpn. J. Appl. Phys. vol. 31, No. 6A, Jun. 1992, Suian Zhang et al, "Using Tertiary Butylamine for Nitrogen Doping During Migration-Enhanced Epitaxial Browth of ZnSe" pp. L666-L668.
Jpn. J. of App. Phys. vol. 26, No. 12, Dec. 1987, Shigeo Fujita et al, "Growth Rate Enhancement by Xenon Lamp Irradiation in Organometallic Vapor-Phase Epitaxy of ZnSe", pp. L2000-L2002.
Journal of Crystal Growth, vol. 101, 1990, Shizuo Fujita et al, "Luminesscence and electrical properties of ZnSe grown by photo-assisted OMVPE", pp. 48-51.

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