Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Patent
1996-02-20
1998-07-28
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
438 45, 438510, 438518, 438522, H01L 2100
Patent
active
057862338
ABSTRACT:
Active acceptor concentrations of p-doped II-VI and III-V semiconductor compound layer provided by chemical vapor deposition are increased by photo-assisted annealing.
REFERENCES:
patent: 4735910 (1988-04-01), Mitsuyu et al.
patent: 5063116 (1991-11-01), Mooney et al.
patent: 5264397 (1993-11-01), Lin et al.
patent: 5273933 (1993-12-01), Hatano et al.
patent: 5306662 (1994-04-01), Nakamura et al.
patent: 5354708 (1994-10-01), Taskar et al.
patent: 5426068 (1995-06-01), Imaizumi et al.
patent: 5496766 (1996-03-01), Amano et al.
patent: 5597761 (1997-01-01), Adomi et al.
Pearton et al. in "Electronics Letters, vol. 30(6),Mar. 1994", in Electrical passivationin hydrogen plasma exposed GaN, Mar. 1994.
Japan J. Applied Physics vol. 31 (1992), pp. 1258-1266 by S. Nakamura et al; vol. 30, 1991, pp. L-L; vol. 31, 1992, pp. L139-L142.
Applied Physics Letter, 65(5) 1994, pp. 593-594, by T. Tanka et al.
Dorman Donald R.
Gallagher Dennis
Taskar Nikhil R.
Nguyen Tuan H.
Spain Norman N.
U.S. Philips Corporation
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