Photo-anodic oxide surface passivation for semiconductors

Fishing – trapping – and vermin destroying

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357 52, 357 32, 437235, 437904, 437173, 437170, 204 383, 204 42, A01L 2714

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active

050863282

ABSTRACT:
A method is disclosed for passivating infrared detector arrays 50. A wafer 48 of indium antimonide (InSb) is subjected an anodization process while being illuminated by a bright incandescent lamp 66. In one embodiment, the photo-anodized layer 72 is used in an array 50 to passivate implanted diode regions 76,78 on the front side thereof, while employing an antireflective coating 74 on the backside anodized surface 70.

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