Phosphorus-doped diamond film allowing significantly reduced...

Details Phosphorus-doped diamond film allowing significantly reduced... Phosphorus-doped diamond film allowing significantly reduced...

2006-08-28

2011-12-13

Ton, Toan (Department: 2889)

Electric lamp or space discharge component or device manufacturi

Process

Electrode making

C313S309000, C313S336000, C313S351000, C313S34600R, C445S024000, C445S046000

Reexamination Certificate

active

08075359

ABSTRACT:
A phosphorus-doped diamond film, which contains phosphorus at a concentration of 1015cm−3or more, has a resistivity of 107Ωcm or less, and allows the voltage for initiation of electron emission to be 30V or less. A method for producing the phosphorus-doped diamond film by growing a diamond film on a diamond substrate by chemical vapor deposition method in an atmosphere containing methane and hydrogen gases and phosphorus with the use of tertiary butyl phosphorus as a source of addition of phosphorus. A diamond electron source having an electrode and a substrate which contains the phosphorous-doped diamond film and emitting electron beams from the phosphorous-doped diamond film when voltage is applied between the electrode and the substrate.

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