Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2003-05-22
2008-03-18
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S096000, C257S103000, C313S504000
Reexamination Certificate
active
07345300
ABSTRACT:
The invention relates to a light emitting component with organic layers and emission of triplet exciton states (phosphorescent light) with increased efficiency, having a layer sequence with a hole injecting contact (anode), one or more hole injecting and transporting layers, a system of layers in the light emission zone, one or more electron transport and injection layers and an electron injecting contact (cathode), characterized in that the light emitting zone comprises a series of heterojunctions with the materials A and B (ABAB . . . ) that form interfaces of the type “staggered type II”, one material (A), having hole transporting or bipolar transport properties and the other material (B) having electron transporting or bi-polar transport properties, and at least one of the two materials A or B being mixed with a triplet emitter dopant that is able to efficiently convert its triplet exciton energy into light.
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Blochwitz-Nimoth Jan
Pfeiffer Martin
Qin Dashan
Zhou Xiang
Crane Sara
Sutherland & Asbill & Brennan LLP
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