Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2007-01-13
2008-11-04
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S088000, C257S098000
Reexamination Certificate
active
07446343
ABSTRACT:
A phosphor converted light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, the light emitting layer being configured to emit light having a first peak wavelength; a first phosphor configured to emit light having a second peak wavelength; and a second phosphor configured to emit light having a third peak wavelength. The second phosphor is an Eu3+-activated phosphor, configured such that in the excitation spectrum at 298K and 1.013 bar, a maximum intensity in a wavelength range between 460 nm and 470 nm is at least 5% of a maximum intensity in a wavelength range between 220 nm to 320 nm.
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Translation of DE 10349038.
Huppertz Petra
Juestel Thomas
Mueller Gerd O.
Mueller-Mach Regina B
Uhlich Dominik
Koninklijke Philips Electronics N.V. et al.
Leiterman Rachel V.
Menz Douglas M
Patent Law Group LLP
Philips Lumileds Lighting Company LLC
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