Phoretic cell

Details Phoretic cell Phoretic cell

2005-01-21

2008-09-09

Wong, Tina M (Department: 2874)

Liquid crystal cells, elements and systems

Particular structure

Having significant detail of cell structure only

C349S123000, C349S129000, C349S166000, C345S097000

Reexamination Certificate

active

07423706

ABSTRACT:
A relief structure alignment layer comprising a relief structure surface incorporating at least one indentation, the at least one indentation having an internal surface extending from the relief structure surface, wherein the relief structure alignment layer has a surface memory alignment layer arranged to impart a preferred liquid crystal director alignment to a liquid-crystal material in contact therewith as well as methods for configuring a liquid crystal material within a cell having a relief structure alignment layer by applying at least one of an electric field and a magnetic field and phoretic displays comprising at least on relief structure alignment layer.

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patent: 7311951 (2007-12-01), Miller et al.
patent: 2004/0135763 (2004-07-01), Kaneko et al.
patent: 2007/0159437 (2007-07-01), Miller et al.
patent: 1 139 154 (2001-10-01), None
patent: 1 154 312 (2001-11-01), None
patent: WO 2004/015491 (2004-02-01), None
Tsonev et al., “The Surface Memory Effect at Conducting and Dielectric Surface Coatings”, Liquid Crystals, vol. 24, pp. 853-859 (1998).
Myrvold, “A Weak Surface Memory Effect in Liquid Crystal Cells with Rubbed Polyimide Layers”, Liquid Crystals, vol. 18, pp. 287-290 (1995).

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