Phonon suppression in quantum wells

Details Phonon suppression in quantum wells Phonon suppression in quantum wells

1992-06-08

1992-11-03

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257192, 257196, H01L 2712, H01L 29161, H01L 3300

Patent

active

051609827

ABSTRACT:
An enhanced mobility semiconductor comprising a host quantum well having at least two charge carrier barrier layers of a wide bandgap material, each of the two charge carrier barrier layers being separated by a conducting region containing charge carriers is provided. A number of phonon barriers having a predetermined thickness are formed in the conducting region wherein the predetermined thickness is chosen to allow charge carrier tunneling through the phonon barriers.

REFERENCES:
patent: 4772934 (1988-09-01), Cunningham et al.
patent: 4799091 (1989-01-01), Reed
patent: 4819036 (1989-04-01), Kuroda et al.
patent: 4937204 (1990-06-01), Ishibashi et al.
patent: 5010376 (1991-04-01), Nishimura et al.
patent: 5060234 (1991-10-01), Schubert et al.
Amor et al., "Two-Dimensional Electron Gas at a GaInAs (AlGa) InAs Interface", Appl. Phys. Lett., vol. 53, #6, Aug. 8, 1988, pp. 479-481.
Ishibashi et al., "Raman scattering from (AlAs).sub.m (GaAs).sub.n ultrathin-layer superlattices", Physical Review B, vol. 33, No. 4, Feb. 15, 1986.

Affiliated with

Also associated with

Rating

Phonon suppression in quantum wells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phonon suppression in quantum wells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phonon suppression in quantum wells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2053446