Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-02-17
1999-06-29
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 17, 257 20, 257 21, 257 97, 257197, H01L 2915
Patent
active
059171952
ABSTRACT:
A structure of periodically varying density is provided, that acts as a phonon resonator for phonons capable of participating in phonon-electron interactions. Specifically, a phonon resonator that is resonant for phonons of appropriate momentum to participate in indirect radiative transitions and/or inter zone intervalley scattering events is provided. Preferably, the structure is an isotope superlattice, most preferably of silicon. The structure of the present invention has improved optical, electrical, and/or heat transfer properties. A method of preparing a the structure of the present invention is also provided.
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B.A. Painter, III
Jarrell Brenda Herschbach
Munson Gene M.
Pasternack Sam
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