Phonon and charge carrier separation in quantum wells

Details Phonon and charge carrier separation in quantum wells Phonon and charge carrier separation in quantum wells

1991-10-02

1994-02-22

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 17, 257 20, 257192, H01L 2978

Patent

active

052890139

ABSTRACT:
A quantum well structure having a host optical phonon confinement well (11) having a characteristic phonon distribution (16), and at least one charge carrier confinement well (17) located near a minima of the phonon distribution (16). In one embodiment, a wide bandgap layer (13) is formed in a central portion of the host optical phonon confinement well (11), wherein the wide bandgap layer (13) has phonon properties closely matching that of the host phonon confinement well (11).

REFERENCES:
patent: 5160982 (1992-11-01), Goronkin et al.

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