Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-08-07
2007-08-07
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S020000, C257S024000, C257S192000
Reexamination Certificate
active
11100095
ABSTRACT:
In one embodiment, a semiconductor device (500) includes a buffer layer (504) formed over a substrate (502). An AlxGa1−xAs layer (506) is formed over the buffer layer (504) and has a first doped region (508) formed therein. An InxGa1−xAs channel layer (512) is formed over the AlxGa1−xAs layer (506). An AlxGa1−xAs layer (518) is formed over the InxGa1−xAs channel layer (512), and the AlxGa1−xAs layer (518) has a second doped region formed therein. A GaAs layer (520) having a first recess is formed over the AlxGa1−xAs layer (518). A control electrode (526) is formed over the AlxGa1−xAs layer (518). A doped GaAs layer (524) is formed over the undoped GaAs layer (520) and on opposite sides of the control electrode (526) and provides first and second current electrodes. When used to amplify a digital modulation signal, the semiconductor device (500) maintains linear operation over a wide temperature range.
REFERENCES:
patent: 4695857 (1987-09-01), Baba et al.
patent: 4833508 (1989-05-01), Ishikawa et al.
patent: 5262660 (1993-11-01), Streit et al.
patent: 5488237 (1996-01-01), Kuwata
patent: 5668387 (1997-09-01), Streit et al.
patent: 6316820 (2001-11-01), Schmitz et al.
patent: 6703638 (2004-03-01), Danzilio
patent: 6967360 (2005-11-01), Anda et al.
Ishikawa et al., “DX-Center-Free GaAs/N-AlGaAs HEMT Structures,” Fujitsu Sci. Tech. J. vol. 24, No. 2, Jun. 1988, pp. 143-149.
Baba et al., “Elimination of a DX-center by an AlAs
-GaAs Superlattice and its Application to 2DEGFETs,” Microelectronic Engineering, vol. 4, 1986, pp. 195-206.
Green Bruce M.
Hartin Olin L.
Lan Ellen Y.
Li Philip H.
Miller Monte G.
Freescale Semiconductor Inc.
Hu Shouxiang
Ingrassia Fisher & Lorenz
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