PHEMT structure having recessed ohmic contact and method for...

Details PHEMT structure having recessed ohmic contact and method for... PHEMT structure having recessed ohmic contact and method for...

2005-12-02

2009-06-23

Rose, Kiesha L (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000, C257S195000, C257SE27012

Reexamination Certificate

active

07550785

ABSTRACT:
According to an exemplary embodiment, a PHEMT (pseudomorphic high electron mobility transistor) structure includes a conductive channel layer. The PHEMT structure further includes at least one doped layer situated over the conductive channel layer. The at least one doped layer can include a heavily doped layer situated over a lightly doped layer. The PHEMT structure further includes a recessed ohmic contact situated on the conductive channel layer, where the recessed ohmic contact is situated in a source/drain region of the PHEMT structure, and where the recessed ohmic contact extends below the at least one doped layer. According to this exemplary embodiment, the recessed ohmic contact is bonded to the conductive channel layer. The recessed ohmic contact is situated adjacent to the at least one doped layer. The PHEMT structure further includes a spacer layer situated between the at least one doped layer and the conductive channel layer.

REFERENCES:
patent: 5140386 (1992-08-01), Huang et al.
patent: 5324682 (1994-06-01), Tserng
patent: 5844261 (1998-12-01), Kuo et al.
patent: 6020226 (2000-02-01), Cerny et al.
patent: 7285807 (2007-10-01), Brar et al.
patent: 2001/0024846 (2001-09-01), Yamaguchi et al.

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