Phased array semiconductor laser with preferred emission in the

Details Phased array semiconductor laser with preferred emission in the Phased array semiconductor laser with preferred emission in the

1985-05-20

1987-11-10

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 46, H01S 319

Patent

active

047062550

ABSTRACT:
A phased array semiconductor lasers provides fundamental or preferred 1.sup.st supermode operation wherein laser fabrication is carried out via a single, continuous fabricating process followed by impurity induced disordering (IID). Fundamental supermode selection is accomplished by providing a multiquantum well superlattice as a cladding layer in the phased array laser structure in combination with the conventional single semiconductor cladding layer, which is followed by spatially disposed impurity induced disordering regions extending through the superlattice to form spatially formed regions capable of providing higher gain compared to adjacent regions not experiencing impurity induced disordering. The adjacent regions without impurity induced disordering contain unspoiled superlattice regions that provide higher real index waveguiding compared to the adjacent disordered regions with the diffusions in the disordered regions have higher conductivity properties compared to the remaining ordered regions and are, therefore, more efficiently pumped electrically. As a result, disordered regions form alternating higher gain regions offset between regions of nondisordered waveguide regions having higher real index waveguiding properties but lower gain properties, thereby fulfilling the conditions necessary to provide fundamental or preferred 1.sup.st supermode operation.

REFERENCES:
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patent: 4371968 (1983-02-01), Trussell, Jr. et al.
patent: 4385389 (1983-05-01), Botez
patent: 4594719 (1986-06-01), Ackley
W. Streifer et al., "Phased Array Diode Lasers", Laser Focus/Electro-Optics, Jun. 1984.
J. Katz et al., "Supermode Discrimination in Phased-Locked Arrays of Semiconductor Lasers", IEEE International Semiconductor Conference in Brazil, Jul. 1984.
TWU et al., "High Power Coupled Ridge Waveguide Semiconductor Laser Arrays", APL vol. 45(7), pp. 709-711 (Oct. 1, 1984).
S. Mukai et al., "Fundamental Mode Oscillation . . . Laser Array", APL, vol. 45(8), pp. 834-835 (Oct. 15, 1984).

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